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FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
January 2007
FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Features
Guaranteed operating temperature range of -40C to
tm
Description
The FOD3180 is a 2A Output Current, High Speed MOSFET Gate Drive Optocoupler. It consists of a aluminium gallium arsenide (AlGaAs) light emitting diode optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high frequency driving of power MOSFETs used in Plasma Display Panels (PDPs), motor control inverter applications and high performance DC/DC converters. The device is packaged in an 8-pin dual in-line housing compatible with 260C reflow processes for lead free solder compliance.
+100C 2A minimum peak output current High speed response: 200ns max propagation delay over temperature range 250kHz maximum switching speed 30ns typ pulse width distortion Wide VCC operating range: 10V to 20V 5000Vrms, 1 minute isolation Under voltage lockout protection (UVLO) with hysteresis Minimum creepage distance of 7.0mm Minimum clearance distance of 7.0mm C-UL, UL and VDE* safety agency approvals pending RDS(ON) of 1.5 (typ.) offers lower power dissipation 10kV/s minimum common mode rejection
Applications
Plasma Display Panel High performance DC/DC convertor High performance switch mode power supply High performance uninterruptible power supply Isolated Power MOSFET gate drive *Requires `V' ordering option
Functional Block Diagram
FOD3180
NO CONNECTION 1
8 VCC
8
ANODE 2
7 OUTPUT
1
CATHODE 3
6 OUTPUT
NO CONNECTION 4
5 VEE
8 1
8 1
Note: A 0.1F bypass capacitor must be connected between pins 5 and 8.
(c)2005 Fairchild Semiconductor Corporation
1
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FOD3180 Rev. 1.0.3
FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Absolute Maximum Ratings (TA = 25C Unless otherwise specified)
Symbol
TSTG TOPR TJ TSOL IF(AVG) IF(tr, tf) IF(TRAN) VR IOH(PEAK) IOL(PEAK) VCC - VEE VO(PEAK) PO PD
Parameter
Storage Temperature Operating Temperature Junction Temperature Lead Solder Temperature Average Input Current(1) LED Current Minimum Rate of Rise/Fall Peak Transient Input Current (<1s pulse width, 300pps) Reverse Input Voltage "High" Peak Output Current(2) "Low" Peak Output Current(2) Supply Voltage Output Voltage Output Power Dissipation(4) Total Power Dissipation(5)
Value
-40 to +125 -40 to +100 -40 to +125 260 for 10 sec. 25 250 1.0 5 2.5 2.5 -0.5 to 25 0 to VCC 250 295
Units
C C C C mA ns A V A A V V mW mW
Recommended Operating Conditions
Symbol
VCC - VEE IF(ON) VF(OFF)
Parameter
Power Supply Input Current (ON) Input Voltage (OFF)
Value
10 to 20 10 to 16 -3.0 to 0.8
Units
V mA V
2 FOD3180 Rev. 1.0.3
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FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Electrical-Optical Characteristics (DC)
Over recommended operating conditions unless otherwise specified. Symbol
IOH
Parameter
High Level Output Current(2)(3)
Test Conditions
VOH = (VCC - VEE - 1V) VOH = (VCC - VEE - 3V)
Min.
0.5 2.0 0.5 2.0 VCC - 0.5
Typ.*
Max.
Unit
A
IOL
Low Level Output Current(2)(3)
VOL = (VCC - VEE - 1V) VOL = (VCC - VEE - 3V)
A
VOH VOL ICCH ICCL IFLH VFHL VF VF / TA VUVLO+ VUVLO-
High Level Output Voltage(6)(7) Low Level Output Voltage(6)(7) High Level Supply Current Low Level Supply Current Threshold Input Current Low to High
IO = -100mA IO = 100mA Output Open, IF = 10 to 16mA Output Open, VF = -3.0 to 0.8V IO = 0mA, VO > 5V
V VEE + 0.5 4.8 5.0 6.0 6.0 8.0 V mA mA mA V 1.43 -1.5 8.3 7.7 0.6 1.8 V mV/C V V V V 60 pF
Threshold Input Voltage High to Low IO = 0mA, VO < 5V Input Forward Voltage Temperature Coefficient of Forward Voltage UVLO Threshold IF = 10mA IF = 10mA VO > 5V, IF = 10mA VO < 5V, IF = 10mA
0.8 1.2
UVLOHYST UVLO Hysteresis BVR CIN Input Reverse Breakdown Voltage Input Capacitance IR = 10A f = 1MHz, VF = 0V 5
*Typical values at TA = 25C
3 FOD3180 Rev. 1.0.3
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FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Switching Characteristics
Over recommended operating conditions unless otherwise specified. Symbol
tPLH tPHL PWD
Parameter
Propagation Delay Time to High Output Level(8) Propagation Delay Time to Low Output Level(8) Pulse Width Distortion(9)
Test Conditions Min.
IF = 10mA, Rg = 10, f = 250kHz, Duty Cycle = 50%, Cg = 10nF 50 50
Typ.* Max.
135 105 200 200 65
Unit
ns ns ns ns ns ns s s kV/s
Propagation Delay Difference Between Any PDD (tPHL - tPLH) Two Parts(10) tr tf tUVLO ON tUVLO OFF | CMH | Rise Time Fall Time UVLO Turn On Delay UVLO Turn Off Delay Output High Level Common Mode Transient Immunity(11) (12)
-90 75 55 2.0 0.3
90
CL = 10nF, Rg = 10
TA = +25C, If = 10 to 16mA, VCM = 1.5kV, VCC = 20V TA = +25C, Vf = 0V, VCM = 1.5kV, VCC = 20V
10
| CML |
Output Low Level Common Mode Transient Immunity(11) (13)
10
kV/s
*Typical values at TA = 25C
Isolation Characteristics
Symbol Parameter
VISO
Test Conditions
Min.
5000
Typ.*
Max.
Unit
Vrms
Withstand Isolation Voltage(14) (15) TA = 25C, R.H. < 50%, t = 1min., II-O 20A Resistance (input to output)(15) Capacitance (input to output) VI-O = 500V Freq. = 1MHz
RI-O CI-O
1011 1
pF
*Typical values at TA = 25C
4 FOD3180 Rev. 1.0.3
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FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Notes: 1. Derate linearly above +70C free air temperature at a rate of 0.3mA/C. 2. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01F) + 0.5, frequency = 8kHz, 50% DF. The maximum pulse width of the output current is 300ns, maximum duty cycle = 0.48%. Output currents specified for different values of VDS for VCC - VEE = 20V with the formula: VOH = (VCC - VEE) - (IOH x RDS(ON)). This guarantees operation at IO peak minimum = 2.0A for -40C to +100C operating temperature range. 3. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01F) + 8.5, frequency = 8kHz, 50% DF. The maximum pulse width of the output current is 1.5s, maximum duty cycle = 2.4%. Output currents specified for different values of VDS for VCC - VEE = 20V with the formula: VOL = (VCC - VEE) - (IOL x RDS(ON)). This guarantees operation at IO peak minimum = 0.5A for -40C to +100C operating temperature range. 4. 5. 6. 7. 8. Derate linearly above +87C, free air temperature at the rate of 0.77mW/C. Refer to Figure 12. No derating required across operating temperature range. In this test, VOH is measured with a dc load current. When driving capacitive load VOH will approach VCC as IOH approaches zero amps. Maximum pulse width = 1ms, maximum duty cycle = 20%. tPHL propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the falling edge of the VO signal. tPLH propagation delay is measured from the 50% level on the rising edge of the input pulse to the 50% level of the rising edge of the VO signal. PWD is defined as | tPHL - tPLH | for any given device.
9.
10. The difference between tPHL and tPLH between any two FOD3180 parts under same test conditions. 11. Pin 1 and 4 need to be connected to LED common. 12. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse VCM to assure that the output will remain in the high state (i.e. VO > 10.0V). 13. Common mode transient immunity in a low state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the output will remain in a low state (i.e. VO < 1.0V). 14. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 6000Vrms for 1 second (leakage detection current limit II-O < 5A). 15. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted together.
5 FOD3180 Rev. 1.0.3
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FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Typical Performance Curves
Fig. 1 Input Forward Current vs. Forward Voltage
I FLH - Low To High Input Current Threshold (mA)
100
6 V 5
CC
Fig. 2 Low To High Input Current Threshold vs. Ambient Temperature
= 10 to 20V
VEE = 0 Output = Open
10
I F - Forward Current (mA)
1
TA = 100oC
TA = -40oC
4
3
0.1
TA = 25oC
2
0.01
1
0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0 -40 -20 0 20 40 60 80 100
VF - Forward Voltage (V)
TA - Ambient Temperature (C)
Fig. 3 Output Low Voltage vs. Ambient Temperature
0.30 VF(OFF) = -3.0 to 0.8V IOUT = 100mA V = 10 to 20V
CC
Fig. 4 High Output Voltage Drop vs. Ambient Temperature
0.00
(VOH - VCC) - High Output Voltage Drop (V)
V -0.05
CC
= 10 to 20V, VEE = 0
0.25
V OL - Output Low Voltage (V)
IF = 10 to 16 mA IOUT = -100 mA
VEE = 0 0.20
-0.10
0.15
-0.15
0.10
-0.20
0.05
-0.25
0.00 -40 -20 0 20 40 60 80 100
-0.30 -40 -20 0 20 40 60
o
80
100
TA - Ambient Temperature (C)
TA - Ambient Temperature ( C)
Fig. 5 Supply Current vs. Ambient Temperature
6.2 V 5.8
CC
Fig. 6 Supply Current vs. Supply Voltage
6.2 IF = 10mA (for ICCH) IF = 0mA (for ICCL) TA = 25oC, VEE = 0V
= 20V, VEE = 0
IF = 10 mA (for ICCH) IF = 0 mA (for ICCL)
5.8
I CC - Supply Current (mA)
5.4 ICCL 5.0 ICCH 4.6
I CC - Supply Current (mA)
5.4
5.0
ICCL
4.6
ICCH
4.2
4.2
3.8 -40 -20 0 20 40 60 80 100
3.8 10 12 14 16 18 20
TA - Ambient Temperature (C)
VCC - Supply Voltage (V)
6 FOD3180 Rev. 1.0.3
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FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Fig. 7 Propagation Delay vs. Load Capacitance
200 VCC = 20V, VEE = 0 180 IF = 10mA, TA = 25 C
o
Fig. 8 Propagation Delay vs. Forward LED Current
200 VCC = 20V, VEE = 0 180 RG = 10, CG = 10nF f = 250 kHz, D. Cycle = 50% TA = 25oC
t P - Propagation Delay (ns)
t P - Propagation Delay (ns)
RG = 10, CG = 10nF f = 250 kHz, D. Cycle = 50%
160 tPHL
160 tPHL
140
140
120 tPLH 100
120 tPLH 100
80
80
60 5 10 15 20 25
60 6 8 10 12 14 16
CG - Load Capacitance (nF)
IF - Forward LED Current (mA)
Fig. 9 Propagation Delay vs. Series Load Resistance
200 VCC = 20V, VEE = 0 180 IF = 10mA, TA = 25oC CG = 10nF f = 250 kHz, D. Cycle = 50%
Fig. 10 Propagation Delay vs. Ambient Temperature
200 VCC = 20V, VEE = 0 180 IF = 10 mA RG = 10, CG = 10nF f = 250kHz, D. Cycle = 50%
t P - Propagation Delay (ns)
160
t P - Propagation Delay (ns)
160
140 tPHL 120 tPLH
140
tPHL
120 tPLH 100
100
80
80
60 10 20 30 40 50
60 -40 -20 0 20 40 60 80 100
RG - Series Load Resistance ()
TA - Ambient Temperature (C)
Fig. 11 Propagation Delay vs. Supply Voltage
180 IF = 10mA, TA = 25oC 160 RG = 10, CG = 10nF f = 250 kHz, D. Cycle = 50%
t P - Propagation Delay (ns)
140
tPHL
120 tPLH 100
80
60 10 15 20 25
VCC - Supply Voltage (V)
7 FOD3180 Rev. 1.0.3
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FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Package Dimensions
Through Hole
PIN 1 ID.
4 3 2 1
4 3 2 1
0.4" Lead Spacing
PIN 1 ID.
0.270 (6.86) 0.250 (6.35)
5 6 7 8
0.270 (6.86) 0.250 (6.35)
0.390 (9.91) 0.370 (9.40)
5
6
7
8
SEATING PLANE
0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.140 (3.55) 0.020 (0.51) MIN
SEATING PLANE
0.390 (9.91) 0.370 (9.40) 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.140 (3.55) 0.004 (0.10) MIN
0.154 (3.90) 0.120 (3.05) 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0.016 (0.40) 0.008 (0.20) 15 MAX 0.300 (7.62) TYP
0.154 (3.90) 0.120 (3.05) 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0.016 (0.40) 0.008 (0.20) 0 to 15 0.400 (10.16) TYP
Surface Mount
0.390 (9.91) 0.370 (9.40)
4 3 2 1
8-Pin DIP - Land Pattern
0.070 (1.78)
PIN 1 ID.
0.060 (1.52)
0.270 (6.86) 0.250 (6.35)
5
6
7
8
0.100 (2.54) 0.295 (7.49) 0.415 (10.54) 0.030 (0.76)
0.070 (1.78) 0.045 (1.14) 0.020 (0.51) MIN
0.300 (7.62) TYP 0.016 (0.41) 0.008 (0.20)
0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP Lead Coplanarity : 0.004 (0.10) MAX
0.045 [1.14] 0.315 (8.00) MIN 0.405 (10.30) MIN
Note: All dimensions are in inches (millimeters)
8 FOD3180 Rev. 1.0.3
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FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Ordering Information
Example: FOD3180 X
X Packaging Option S: Surface Mount Lead Bend SD: Surface Mount, Tape and Reel T: 0.4" Lead Spacing V: VDE Approved TV: VDE Approved, 0.4" Lead Spacing SV: VDE Approved, Surface Mount SDV: VDE Approved, Surface Mount, Tape and Reel
Marking Information
1
3180 V
3 4
2 6
XX YY B
5
Definitions
1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) Two digit year code, e.g., `03' Two digit work week ranging from `01' to `53' Assembly package code
9 FOD3180 Rev. 1.0.3
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FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Carrier Tape Specifications
P0 K0
t
P2
D0 E
A0 W1 B0
F W
d
User Direction of Feed
P
D1
Symbol
W t P0 D0 E F P2 P A0 B0 K0 W1 d R Pocket Pitch Tape Width
Description
Tape Thickness Sprocket Hole Pitch Sprocket Hole Diameter Sprocket Hole Location Pocket Location
Dimension in mm
16.0 0.3 0.30 0.05 4.0 0.1 1.55 0.05 1.75 0.10 7.5 0.1 4.0 0.1 12.0 0.1 10.30 0.20 10.30 0.20 4.90 0.20
Pocket Dimensions
Cover Tape Width Cover Tape Thickness Max. Component Rotation or Tilt Min. Bending Radius
1.6 0.1 0.1 max 10 30
10 FOD3180 Rev. 1.0.3
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FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Reflow Profile
300 Temperature (C) 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Time (Minute) * Peak reflow temperature: 260 C (package surface temperature) * Time of temperature higher than 183 C for 160 seconds or less * One time soldering reflow is recommended Time above 183C, <160 sec Ramp up = 2-10C/sec 260 C peak 245 C, 10-30 s
Output Power Derating
The maximum package power dissipation is 295mW. The package is limited to this level to ensure that under normal operating conditions and over extended temperature range that the semiconductor junction temperatures do not exceed 125C. The package power is composed of three elements; the LED, static operating power of the output IC, and the power dissipated in the output power MOSFET transistors. The power rating of the output IC is 250mW. This power is divided between the static power of the integrated circuit, which is the product of IDD times the power supply voltage (VDD - VEE). The maximum IC static output power is 150mW, (VDD - VEE) = 25V, IDD = 6mA. This maximum condition is valid over the operational temperature range of -40C to +100C. Under these maximum operating conditions, the output of the power MOSFET is allowed to dissipate 100mW of power. The absolute maximum output power dissipation versus ambient temperature is shown in Figure 12. The output driver is capable of supplying 100mW of output power over the temperature range from -40C to 87C. The output derates to 90mW at the absolute maximum operating temperature of 100C.
Fig. 12 Absolute Maximum Power Dissipation vs. Ambient Temperature
0.15
The output power is the product of the average output current squared times the output transistor's RDS(ON): PO(AVG) = IO(AVG)2 * RDS(ON) The IO(AVG) is the product of the duty factor times the peak current flowing in the output. The duty factor is the ratio of the `on' time of the output load current divided by the period of the operating frequency. An RDS(ON) of 2.0 results in an average output load current of 200mA. The load duty factor is a ratio of the average output time of the power MOSFET load circuit and period of the driving frequency. The maximum permissible, operating frequency is determined by the load supplied to the output at its resulting output pulse width. Figure 13 shows an example of a 0.03F gate to source capacitance with a series resistance of 8.50. This reactive load results in a composite average pulse width of 1.5s. Under this load condition it is not necessary to derate the absolute maximum output current until the frequency of operation exceeds 63kHz.
Fig. 13 Output Current Derating vs. Frequency
2.5
IO - Peak Output Current (A)
VDD - VEE = Max. = 25V IDD = 6mA LED Power = 45mW
2
Power Dissipation (W)
1.5
0.1
1
TA = -40C to 100C Load = .03F +8.5 VDD = 20V IF = 12mA LED Duty Factor = 50% Output Pulse Width = 1.5s
0.05
0.5
0 1 10 100
0 -40
F - Frequency (kHz)
-20 0 20 40 60 80 100
TA - Ambient Temperature (C)
11 FOD3180 Rev. 1.0.3
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FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
IOH and IOL Test Conditions
This device is tested and specified when driving a complex reactive load. The load consists of a capacitor in the series with a current limiting resistor. The capacitor represents the gate to source capacitance of a power MOSFET transistor. The test load is a 0.03uF capacitor in series with an 8.5 resistor. The LED test frequency is 10.0kHz with a 50% duty cycle. The combined IOH and IOL output load current duty factor is 0.6% at the test frequency. Figure 14 illustrates the relationship of the LED input drive current and the device's output voltage and sourcing and sinking currents. The 0.03F capacitor load represents the gate to source capacitance of a very large power MOSFET transistor. A single supply voltage of 20V is used in the evaluation. Figure 15 shows the test schematic to evaluate the output voltage and sourcing and sinking capability of the device. The IOH and IOL are measured at the peak of their respective current pulses.
IF = 8mA
LED
ON
20V
OFF
OUTPUT
0
P-Channel (ON)
IOH = 2.2A
N-Channel (ON)
Load Current
IOL = 2.2A
1s/Div Figure 14. FOD 3180 Output Current and Output Voltage vs. LED Drive
Pulse Generator
1
FOD3180 8
0.1F
2 7
VO 0.33F
IOMON
IFMON
3 6
8.5
22F
100
100
4 5
Figure 15. Test Schematic
12 FOD3180 Rev. 1.0.3
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I22

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